Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature

Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature

Subthreshold swing (SS) in a silicon gate-all-around (GAA) nanowire MOSFET with zero body factor is examined from room temperature (RT) down to 4 K. A fully depleted (FD) SOI MOSFET is also evaluated. The values of SS of both transistors decrease in proportional to temperature (T) but start to satur...

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Bibliographic Details
Main Authors: Shohei Sekiguchi, Min-Ju Ahn, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Nanowire
MOSFET
subthreshold swing
Online Access:https://ieeexplore.ieee.org/document/9525143/

Internet

https://ieeexplore.ieee.org/document/9525143/

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