Distribution of D1 dislocation luminescence centers in Si+-implanted silicon and the photoluminescence model

Distribution of D1 dislocation luminescence centers in Si+-implanted silicon and the photoluminescence model

Using step-by-step removal of silicon layers, in which dislocation-related photoluminescence is observed after Si+ (100 keV, 1·1015 cm−2) ion implantation followed by high-temperature annealing in a chlorine containing atmosphere, it has been found that a majority of dislocation-related centers of l...

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Bibliografische gegevens
Hoofdauteurs: Sergeyi N. Nagornykh, Vladimir I. Pavlenkov, David I. Tetelbaum, Aleksey N. Mikhaiylov, Aleksey I. Belov, Dmitry S. Korolev, Andrey N. Shushunov, Aleksandr I. Bobrov, Dmitry A. Pavlov, Elena I. Shek
Formaat: Artikel
Taal:English
Gepubliceerd in: Pensoft Publishers 2015-06-01
Reeks:Modern Electronic Materials
Onderwerpen:
Silicon
Ion implantation
Dislocations
Dislocation luminescence
Photoluminescence model
Online toegang:http://www.sciencedirect.com/science/article/pii/S2452177915000122

Internet

http://www.sciencedirect.com/science/article/pii/S2452177915000122

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