Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments
Reactor dosimetry environments require radiation detectors that are capable of operating at high temperatures in extremely high neutron and gamma-ray dose rates. Silicon carbide (SiC) is one of the most promising wide bandgap semiconductors (3.27 eV) for harsh environment applications due to its rad...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2023-01-01
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| Series: | EPJ Web of Conferences |
| Online Access: | https://www.epj-conferences.org/articles/epjconf/pdf/2023/04/epjconf_isrd2023_01003.pdf |