Nano-positive up negative down in binary oxide ferroelectrics
Ferroelectric HfO2 and ZrO2-based materials are promising candidates for next-generation ferroelectric devices, but their characterization is challenging due to complex factors such as crystal phases, degradation mechanisms, and local inhomogeneities. In this work, we propose a novel nanosized posit...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0185913 |