Investigation of the Degradation Mechanism of SiC MOSFET Subjected to Multiple Stresses
The performance requirements for power devices in airborne equipment are increasingly demanding, while environmental and working stresses are becoming more diverse. The degradation mechanisms of devices subjected to multiple stresses become more complex. Most proposed degradation mechanisms and mode...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-07-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/14/7/1469 |