Reducing the Source Resistance by Increasing the Gate Effect on Substrate for Future Terahertz HEMT Device

Reducing the Source Resistance by Increasing the Gate Effect on Substrate for Future Terahertz HEMT Device

In this paper, we present the dependence of source resistance sensibility on the gate bias effect in a High Electron Mobility Transistor (HEMT) using the Drift-Diffus (D-D) model with the SILVACO Technology Computer-Aided Design (TCAD) tool. The obtained results show that the increases of gate bias...

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Bibliographic Details
Main Author: Soufiane Derrouiche
Format: Article
Language:English
Published: VSB-Technical University of Ostrava 2021-01-01
Series:Advances in Electrical and Electronic Engineering
Subjects:
device performances
gate effect
high electron mobility transistors (hemt)
hole concentration
source resistance
substrate.
Online Access:http://advances.utc.sk/index.php/AEEE/article/view/3820

Internet

http://advances.utc.sk/index.php/AEEE/article/view/3820

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