Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers
Epitaxial VO2/SnO2 thin film heterostructures were deposited on m-cut sapphire substrates via pulsed laser deposition. By adjusting SnO2 (150 nm) growth conditions, we are able to control the interfacial strain between the VO2 film and SnO2 buffer layer such that the semiconductor-to-metal transitio...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5004125 |