Phenomenological Model of Gate-Dependent Kink in I-V Characteristics of MoS<sub>2</sub> Double-Gate FETs

Phenomenological Model of Gate-Dependent Kink in I-V Characteristics of MoS<sub>2</sub> Double-Gate FETs

A phenomenological model, accounting for interface states at metal-semiconductor contacts, is proposed to explain particular gate-bias-dependent kinking in I-V characteristics sometimes observed in MoS<sub>2</sub> FETs. The effect is studied in double-gate FETs by varying top-gate voltag...

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Bibliographic Details
Main Authors: Michael A. Rodder, Ananth Dodabalapur
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
MoS₂
double-gate FET
I-V kink
interface states
phenomenological model
Online Access:https://ieeexplore.ieee.org/document/9404298/

Internet

https://ieeexplore.ieee.org/document/9404298/

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