Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si
In this work, the electrophysical parameters of silicon doped with nickel by the diffusion method, are studied as well as the morphological parameters of micro- and nanoinclusions of nickel atoms formed in silicon. At the same time, the diffusion of nickel into silicon was carried out in a SUOL-4M f...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2023-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2023/39/e3sconf_transsiberia2023_14018.pdf |