| Summary: | In this work, the electrophysical parameters of silicon doped with nickel by the diffusion method, are studied as well as the morphological parameters of micro- and nanoinclusions of nickel atoms formed in silicon.
At the same time, the diffusion of nickel into silicon was carried out in a SUOL-4M furnace at a temperature of T=1573 K for t=2 hours. The results of studies of the temperature dependence of the concentration, mobility and resistivity of n-Siz<Ni> samples, obtained using the Hall effect method using the Ecopia HMS-7000 setup, are presented. The morphological parameters of impurity atom clusters in n-Si<Ni> samples were also studied and their images were obtained using a JSM-IT200 scanning electron microscope.
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