Modeling and Simulation of Nonvolatile Memory Based on Copper Sulfide

<p>The memory cells has become one of the computer basics electronic components, especially nonvolatile ion-dependent growth of filament or so called Conductive Bridge Random Access Memory (CBRAM) type. The memory cells in this work is focused on using copper sulfide as ionic compound Cu<su...

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Bibliographic Details
Main Author: Khalid Khaleel Mohammad
Format: Article
Language:English
Published: Tikrit University 2016-10-01
Series:Tikrit Journal of Engineering Sciences
Subjects:
Online Access:http://www.tj-es.com/ojs/index.php/tjes/article/view/611