High‐Throughput Exploration of Phase Evolution in (Pb1−XBaX)ZrO3 Thin Films

High‐Throughput Exploration of Phase Evolution in (Pb1−XBaX)ZrO3 Thin Films

Abstract Antiferroelectric thin films hold significant potential for bringing novel physics phenomena and fascinating properties. Their applications are often intertwined with the antiferroelectric‐ferroelectric phase transition, which is contingent on the chemical compositions of the constituent ma...

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Bibliographic Details
Main Authors: Peipei Su, Chuanlai Ren, Lingping Zeng, Feng An, Minghuan Li, Qianxin Chen, Yuan Zhang, Yangchun Tan, Jinbin Wang, Xiangli Zhong, Mingqiang Huang, Gaokuo Zhong
Format: Article
Language:English
Published: Wiley-VCH 2024-04-01
Series:Advanced Electronic Materials
Subjects:
antiferroelectric
ferroelectric‐like
high‐throughput
PbZrO3
thin films
Online Access:https://doi.org/10.1002/aelm.202300746

Internet

https://doi.org/10.1002/aelm.202300746

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