Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes
The nanopipes in GaN films grown on sapphire substrates using metal-organic chemical vapor deposition were identified as leakage-related defects through investigations by PeakForce tunneling atomic force microscopy. An insertion layer of n-Al0.03Ga0.97N can prevent nanopipes from extending, thereby...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0200855 |