Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes
The nanopipes in GaN films grown on sapphire substrates using metal-organic chemical vapor deposition were identified as leakage-related defects through investigations by PeakForce tunneling atomic force microscopy. An insertion layer of n-Al0.03Ga0.97N can prevent nanopipes from extending, thereby...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0200855 |
| _version_ | 1797227652791140352 |
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| author | Qian Yang Jing Yang Haoran Long Zongshun Liu Lihong Duan Degang Zhao |
| author_facet | Qian Yang Jing Yang Haoran Long Zongshun Liu Lihong Duan Degang Zhao |
| author_sort | Qian Yang |
| collection | DOAJ |
| description | The nanopipes in GaN films grown on sapphire substrates using metal-organic chemical vapor deposition were identified as leakage-related defects through investigations by PeakForce tunneling atomic force microscopy. An insertion layer of n-Al0.03Ga0.97N can prevent nanopipes from extending, thereby reducing the leakage current of Schottky diodes. By analyzing the element’s distribution in and out of nanopipes on epitaxial wafers, it is inferred that segregation of Ga around nanopipes may be responsible for the leakage. |
| first_indexed | 2024-04-24T14:44:13Z |
| format | Article |
| id | doaj.art-c79e0497794b439e96255dcd2e796664 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-24T14:44:13Z |
| publishDate | 2024-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-c79e0497794b439e96255dcd2e7966642024-04-02T20:29:17ZengAIP Publishing LLCAIP Advances2158-32262024-03-01143035005035005-510.1063/5.0200855Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipesQian Yang0Jing Yang1Haoran Long2Zongshun Liu3Lihong Duan4Degang Zhao5State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaThe nanopipes in GaN films grown on sapphire substrates using metal-organic chemical vapor deposition were identified as leakage-related defects through investigations by PeakForce tunneling atomic force microscopy. An insertion layer of n-Al0.03Ga0.97N can prevent nanopipes from extending, thereby reducing the leakage current of Schottky diodes. By analyzing the element’s distribution in and out of nanopipes on epitaxial wafers, it is inferred that segregation of Ga around nanopipes may be responsible for the leakage.http://dx.doi.org/10.1063/5.0200855 |
| spellingShingle | Qian Yang Jing Yang Haoran Long Zongshun Liu Lihong Duan Degang Zhao Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes AIP Advances |
| title | Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes |
| title_full | Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes |
| title_fullStr | Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes |
| title_full_unstemmed | Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes |
| title_short | Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes |
| title_sort | reducing leakage current in gan schottky diodes by suppressing hollow core nanopipes |
| url | http://dx.doi.org/10.1063/5.0200855 |
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