Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy
Silicon doped with gadolinium and silver impurities were studied using a Renishaw InVia Raman spectrometer. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. Some changes are observed in the Raman spectra of gadolinium-doped silicon sa...
| Autors principals: | , , , |
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| Format: | Article |
| Idioma: | English |
| Publicat: |
V.N. Karazin Kharkiv National University Publishing
2023-09-01
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| Col·lecció: | East European Journal of Physics |
| Matèries: | |
| Accés en línia: | https://periodicals.karazin.ua/eejp/article/view/22010 |