Unlocking AlN Piezoelectric Performance with Earth‐Abundant Dopants

Unlocking AlN Piezoelectric Performance with Earth‐Abundant Dopants

Abstract The increasing demand for high‐performance piezoelectric materials and toxicity and thermal stability issues of the widely used lead zirconate titanates (PZT) have spurred a search for better alternatives in electronic devices. In comparison to PZT, group III nitrides such as aluminum nitri...

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Bibliographic Details
Main Authors: Jacob Startt, Mohammed Quazi, Pallavi Sharma, Irma Vazquez, Aseem Poudyal, Nathan Jackson, Remi Dingreville
Format: Article
Language:English
Published: Wiley-VCH 2023-04-01
Series:Advanced Electronic Materials
Subjects:
aluminum nitride
doping
materials sustainability
piezoelectricity
thin films
Online Access:https://doi.org/10.1002/aelm.202201187

Internet

https://doi.org/10.1002/aelm.202201187

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