The Dual Effects of Gate Dielectric Constant in Tunnel FETs

In this paper, tunnel FETs (TFET) with different gate dielectrics are studied. The effects of gate dielectric constant in the TFET are investigated with qualitative analysis and numerical simulations. The regulation of gate-channel coupling and the modulation of electric field at the tunnel junction...

תיאור מלא

מידע ביבליוגרפי
Main Authors: Hao Wang, Sheng Chang, Jin He, Qijun Huang, Feng Liu
פורמט: Article
שפה:English
יצא לאור: IEEE 2016-01-01
סדרה:IEEE Journal of the Electron Devices Society
נושאים:
גישה מקוונת:https://ieeexplore.ieee.org/document/7570188/