Deep-trap dominated degradation of the endurance characteristics in OFET memory with polymer charge-trapping layer

Deep-trap dominated degradation of the endurance characteristics in OFET memory with polymer charge-trapping layer

Abstract Organic field-effect transistors (OFETs) with polymer charge-trapping dielectric, which exhibit many advantages over Si-based memory devices such as low cost, light weight, and flexibility, still suffer challenges in practical application due to the unsatisfied endurance characteristics and...

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Bibliographic Details
Main Authors: Tianpeng Yu, Zhenliang Liu, Yiru Wang, Lunqiang Zhang, Shuyi Hou, Zuteng Wan, Jiang Yin, Xu Gao, Lei Wu, Yidong Xia, Zhiguo Liu
Format: Article
Language:English
Published: Nature Portfolio 2023-04-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-023-32959-w

Internet

https://doi.org/10.1038/s41598-023-32959-w

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