Hysteresis Dynamics in Double-Gated n-Type WSe<sub>2</sub> FETs With High-k Top Gate Dielectric

Hysteresis Dynamics in Double-Gated n-Type WSe<sub>2</sub> FETs With High-k Top Gate Dielectric

We propose double-gated n-type WSe<sub>2</sub> FETs with low leakage, low hysteresis top gate high-k dielectric stack. The top gate dielectric layer is deposited by HfO<sub>2</sub> ALD on an Al<sub>2</sub>O<sub>3</sub> seed layer obtained from the evap...

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Bibliographic Details
Main Authors: Nicolo Oliva, Yury Yu Illarionov, Emanuele A. Casu, Matteo Cavalieri, Theresia Knobloch, Tibor Grasser, Adrian M. Ionescu
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
WSe₂
double-gated FETs
2D materials
field-effect devices
atomic layer deposition
Online Access:https://ieeexplore.ieee.org/document/8790754/

Internet

https://ieeexplore.ieee.org/document/8790754/

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