Hysteresis Dynamics in Double-Gated n-Type WSe<sub>2</sub> FETs With High-k Top Gate Dielectric

Hysteresis Dynamics in Double-Gated n-Type WSe<sub>2</sub> FETs With High-k Top Gate Dielectric

We propose double-gated n-type WSe<sub>2</sub> FETs with low leakage, low hysteresis top gate high-k dielectric stack. The top gate dielectric layer is deposited by HfO<sub>2</sub> ALD on an Al<sub>2</sub>O<sub>3</sub> seed layer obtained from the evap...

Full description

Bibliographic Details
Main Authors:	Nicolo Oliva, Yury Yu Illarionov, Emanuele A. Casu, Matteo Cavalieri, Theresia Knobloch, Tibor Grasser, Adrian M. Ionescu
Format:	Article
Language:	English
Published:	IEEE 2019-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	WSe₂ double-gated FETs 2D materials field-effect devices atomic layer deposition
Online Access:	https://ieeexplore.ieee.org/document/8790754/

Similar Items

The Impact of Hysteresis Effect on Device Characteristic and Reliability for Various Fin-Widths Tri-Gate Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric FinFET
by: Wen-Qi Zhang, et al.
Published: (2023-04-01)

Circuit simulation of floating-gate FET (FGFET) for logic application
by: Yunjae Kim, et al.
Published: (2023-12-01)

Phenomenological Model of Gate-Dependent Kink in I-V Characteristics of MoS<sub>2</sub> Double-Gate FETs
by: Michael A. Rodder, et al.
Published: (2021-01-01)

Enhanced Hole Injection Into Single Layer WSe<sub>2</sub>
by: Michael A. Rodder, et al.
Published: (2018-01-01)

Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET
by: Soohyun Kim, et al.
Published: (2020-04-01)

A Feasible Alternative to FDSOI and FinFET: Optimization of W/La<sub>2</sub>O<sub>3</sub>/Si Planar PMOS with 14 nm Gate-Length
by: Siew Kien Mah, et al.
Published: (2021-09-01)

The Dual Effects of Gate Dielectric Constant in Tunnel FETs
by: Hao Wang, et al.
Published: (2016-01-01)

Synthesis and Tribological Properties of WSe<sub>2</sub>Nanorods
by: Yang Jinghai, et al.
Published: (2008-01-01)

Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs
by: Yuh-Chen Lin, et al.
Published: (2019-01-01)

Enhanced Gas Sensitivity of Au-Decorated Flowery WSe<sub>2</sub> Nanostructures
by: Xia Zhang, et al.
Published: (2022-11-01)

A Physical Model for the Hysteresis in MoS<sub>2</sub> Transistors
by: Theresia Knobloch, et al.
Published: (2018-01-01)

Controlling L-BTBT in Emerging Nanotube FETs Using Dual-Material Gate
by: Aakash Kumar Jain, et al.
Published: (2018-01-01)

Selective Growth of WSe2 with Graphene Contacts
by: Yu-Ting Lin, et al.
Published: (2020-03-01)

Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact
by: Takamasa Kawanago, et al.
Published: (2023-01-01)

A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric
by: Paul Jacob, et al.
Published: (2023-12-01)

Methane-Mediated Vapor Transport Growth of Monolayer WSe<sub>2</sub> Crystals
by: Hyeon-Sik Jang, et al.
Published: (2019-11-01)

Implementing Logic Functions Using Independently-Controlled Gate in Double-Gate Tunnel FETs: Investigation and Analysis
by: Shelly Garg, et al.
Published: (2019-01-01)

Electronic and Optoelectronic Monolayer WSe<sub>2</sub> Devices via Transfer-Free Fabrication Method
by: Zixuan Wang, et al.
Published: (2023-04-01)

Exploring the Physical Properties of Tungsten Diselenide (WSe2): A First Principle Approach
by: Mohammed Adamu, et al.
Published: (2023-09-01)

Enhanced Sensitivity of A549 Cells to Doxorubicin with WS<sub>2</sub> and WSe<sub>2</sub> Nanosheets via the Induction of Autophagy
by: Weitao Jin, et al.
Published: (2024-01-01)

The Auger process in multilayer WSe2 crystals
by: Li, Yuanzheng, et al.
Published: (2020)

Dissolved Gas Analysis in Transformer Oil Using Pt-Doped WSe<sub>2</sub> Monolayer Based on First Principles Method
by: Zhenwei Chen, et al.
Published: (2019-01-01)

Heterojunction Design between WSe<sub>2</sub> Nanosheets and TiO<sub>2</sub> for Efficient Photocatalytic Hydrogen Generation
by: Xu Guo, et al.
Published: (2022-12-01)

Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations
by: Yoshitaka Shingaya, et al.
Published: (2023-01-01)

Resonant THz detection by periodic multi-gate plasmonic FETs
by: Yuhui Zhang, et al.
Published: (2023-07-01)

FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability
by: Daniel Nagy, et al.
Published: (2018-01-01)

Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterojunction
by: Junqiang Zhu, et al.
Published: (2023-05-01)

Ferroelectric-Like Non-Volatile FET With Amorphous Gate Insulator for Supervised Learning Applications
by: Yue Peng, et al.
Published: (2021-01-01)

Sub-<italic>kT/q</italic> Switching in Strong Inversion in PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Gated Negative Capacitance FETs
by: S. Dasgupta, et al.
Published: (2015-01-01)

Carbon Dioxide Conversion with High-Performance Photocatalysis into Methanol on NiSe<sub>2</sub>/WSe<sub>2</sub>
by: Zheng Luo, et al.
Published: (2020-08-01)

<italic>I-V-T</italic> Characteristics and Temperature Sensor Performance of a Fully 2-D WSe<sub>2</sub>/MoS<sub>2</sub> Heterojunction Diode at Cryogenic Temperatures
by: Christian D. Matthus, et al.
Published: (2023-01-01)

Effective Photoluminescence Imaging of Bubbles in hBN-Encapsulated WSe<sub>2</sub> Monolayer
by: Seong-Yeon Lee, et al.
Published: (2020-02-01)

Self-Organized Ge Nanospherical Gate/SiO<sub>2</sub>/Si<sub>0.15</sub>Ge<sub>0.85</sub>–Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio
by: Po-Hsiang Liao, et al.
Published: (2019-01-01)

GaN Nanotube FET With Embedded Gate for High Performance, Low Power Applications
by: Ke Han, et al.
Published: (2020-01-01)

Femtosecond Pulsed Fiber Laser by an Optical Device Based on NaOH-LPE Prepared WSe<sub>2</sub> Saturable Absorber
by: Si Chen, et al.
Published: (2022-08-01)

The High Coercivity Field in Chemically Bonded WSe<sub>2</sub>/MoSe<sub>2</sub> Powder
by: Shiu-Ming Huang, et al.
Published: (2021-12-01)

3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET
by: Yi-Wen Lin, et al.
Published: (2023-01-01)

Hydrogel-Gated FETs in Neuromorphic Computing to Mimic Biological Signal: A Review
by: Sankar Prasad Bag, et al.
Published: (2024-03-01)

On Temperature Dependency of Steep Subthreshold Slope in Dual-Independent-Gate FinFET
by: Jian Zhang, et al.
Published: (2015-01-01)

Uniaxial Strain Tuning of Upconversion Photoluminescence in Monolayer WSe2
by: Shrawan Roy, et al.
Published: (2024-04-01)