Parameter Extraction for the PSPHV LDMOS Transistor Model

Parameter Extraction for the PSPHV LDMOS Transistor Model

This paper details a robust parameter extraction flow for the PSPHV LDMOS transistor model. The procedure uses a global scaling parameter set and accounts for self-heating. We describe how to determine parameters associated with important physical effects specific to PSPHV: non-uniform lateral chann...

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Bibliographic Details
Main Authors: Kejun Xia, Colin C. McAndrew, Ronald Van Langevelde
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
MOSFET
LDMOS
parameter extraction
semiconductor device modeling
SPICE
Online Access:https://ieeexplore.ieee.org/document/9146541/

Internet

https://ieeexplore.ieee.org/document/9146541/

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