Parameter Extraction for the PSPHV LDMOS Transistor Model
This paper details a robust parameter extraction flow for the PSPHV LDMOS transistor model. The procedure uses a global scaling parameter set and accounts for self-heating. We describe how to determine parameters associated with important physical effects specific to PSPHV: non-uniform lateral chann...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9146541/ |