Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration

Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration

Two-dimensional material indium selenide (InSe) holds great promise for applications in electronics and optoelectronics by virtue of its fascinating properties. However, most multilayer InSe-based transistors suffer from extrinsic scattering effects from interface disorders and the environment, whic...

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Bibliographic Details
Main Authors: Zhiwei Li, Jidong Liu, Haohui Ou, Yutao Hu, Jiaqi Zhu, Jiarui Huang, Haolin Liu, Yudi Tu, Dianyu Qi, Qiaoyan Hao, Wenjing Zhang
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Nanomaterials
Subjects:
field effect transistor
2D materials
van der Waals integration
carrier mobility
Online Access:https://www.mdpi.com/2079-4991/14/4/382

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https://www.mdpi.com/2079-4991/14/4/382

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