Evaluation of the turn‐off transient controllability for high‐power IGBT modules

Abstract The efficient and flexible conversion of electrical energy is increasingly accomplished by megawatt insulated gate bipolar transistor (IGBT) modules. Their dynamic performance is influenced by the gate driver control, operating points and the switching loop parasitics, which are crucial to...

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Bibliographic Details
Main Authors: Kun Tan, Bing Ji, Jun Wang, Wenjuan Deng, Daohui Li, Zhiqiang Wang, Zheng Liu, Wenping Cao
Format: Article
Language:English
Published: Wiley 2022-05-01
Series:IET Power Electronics
Online Access:https://doi.org/10.1049/pel2.12255