Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide

Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide

          The use of silicon carbide is increasing significantly in the fields of research and technology. Topological indices enable data gathering on algebraic graphs and provide a mathematical framework for analyzing the chemical structural characteristics. In this paper, well-known degree-based...

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Bibliographic Details
Main Authors: Abid Mahboob, Muhammad Waheed Rasheed, Jalal Hatem Hussein Bayati, Iqra Hanif, Sajid Mahboob Alam
Format: Article
Language:Arabic
Published: College of Science for Women, University of Baghdad 2024-01-01
Series:Baghdad Science Journal
Subjects:
Bi-distance edges, Molecular graph, Randic index, Silicon Carbide Si2C3-1[t, h], Topological index, Zagreb index.
Online Access:https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/8178

Internet

https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/8178

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