Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET)

Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET)

In this paper, analysis and optimization of surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET) has been discussed with the help of technology computer-aided design (TCAD) simulation. The SCNW TFET features an ultra-thin tunnel layer at source sidewall and shows a high <span...

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Bibliographic Details
Main Authors: Seung-Hyun Lee, Jeong-Uk Park, Garam Kim, Dong-Woo Jee, Jang Hyun Kim, Sangwan Kim
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Applied Sciences
Subjects:
nanowire
TFET
subthreshold swing
low-power, steep switching
ultra-thin tunnel region
vertical band-to-band tunneling
Online Access:https://www.mdpi.com/2076-3417/10/10/3596

Internet

https://www.mdpi.com/2076-3417/10/10/3596

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