Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p<sup>+</sup>/n Junction Formation
Epitaxial in situ doped Si<sub>0.73</sub>Ge<sub>0.27</sub> alloys were grown selectively on patterned bulk Ge and bulk Si wafers. Si<sub>0.73</sub>Ge<sub>0.27</sub> layers with a surface roughness of less than 3 nm were demonstrated. Selectively grown...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-03-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/4/578 |