Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p<sup>+</sup>/n Junction Formation
Epitaxial in situ doped Si<sub>0.73</sub>Ge<sub>0.27</sub> alloys were grown selectively on patterned bulk Ge and bulk Si wafers. Si<sub>0.73</sub>Ge<sub>0.27</sub> layers with a surface roughness of less than 3 nm were demonstrated. Selectively grown...
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MDPI AG
2020-03-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/9/4/578 |
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| author | Konstantinos Garidis Ahmad Abedin Ali Asadollahi Per-Erik Hellström Mikael Östling |
| author_facet | Konstantinos Garidis Ahmad Abedin Ali Asadollahi Per-Erik Hellström Mikael Östling |
| author_sort | Konstantinos Garidis |
| collection | DOAJ |
| description | Epitaxial in situ doped Si<sub>0.73</sub>Ge<sub>0.27</sub> alloys were grown selectively on patterned bulk Ge and bulk Si wafers. Si<sub>0.73</sub>Ge<sub>0.27</sub> layers with a surface roughness of less than 3 nm were demonstrated. Selectively grown p<sup>+</sup>Si<sub>0.73</sub>Ge<sub>0.27</sub> layers exhibited a resistivity of 3.5 mΩcm at a dopant concentration of 2.5 × 10<sup>19</sup> boron atoms/cm<sup>3</sup>. P<sup>+</sup>/n diodes were fabricated by selectively growing p<sup>+</sup>- Si<sub>0.73</sub>Ge<sub>0.27</sub> on n-doped bulk Ge and n-doped Si wafers, respectively. The geometrical leakage current contribution shifts from the perimeter to the bulk as the diode sizes increase. Extracted near midgap activation energies are similar to p<sup>+</sup>/n Ge junctions formed by ion implantation. This indicates that the reverse leakage current in p<sup>+</sup>/n Ge diodes fabricated with various doping methods, could originate from the same trap-assisted mechanism. Working p<sup>+</sup>/n diodes on Ge bulk substrates displayed a reverse current density as low as 2.2·10<sup>−2</sup> A/cm<sup>2</sup> which was found to be comparable to other literature data. The layers developed in this work can be used as an alternative method to form p<sup>+</sup>/n junctions on Ge substrates, showing comparable junction leakage results to ion implantation approaches. |
| first_indexed | 2024-03-11T10:10:15Z |
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| language | English |
| last_indexed | 2024-03-11T10:10:15Z |
| publishDate | 2020-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-c8da4e70bd234de793a15f89a3977b952023-11-16T14:35:22ZengMDPI AGElectronics2079-92922020-03-019457810.3390/electronics9040578Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p<sup>+</sup>/n Junction FormationKonstantinos Garidis0Ahmad Abedin1Ali Asadollahi2Per-Erik Hellström3Mikael Östling4Division of Electronics and Embedded Systems, School of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, 114 28 Stockholm, SwedenDivision of Electronics and Embedded Systems, School of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, 114 28 Stockholm, SwedenDivision of Electronics and Embedded Systems, School of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, 114 28 Stockholm, SwedenDivision of Electronics and Embedded Systems, School of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, 114 28 Stockholm, SwedenDivision of Electronics and Embedded Systems, School of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, 114 28 Stockholm, SwedenEpitaxial in situ doped Si<sub>0.73</sub>Ge<sub>0.27</sub> alloys were grown selectively on patterned bulk Ge and bulk Si wafers. Si<sub>0.73</sub>Ge<sub>0.27</sub> layers with a surface roughness of less than 3 nm were demonstrated. Selectively grown p<sup>+</sup>Si<sub>0.73</sub>Ge<sub>0.27</sub> layers exhibited a resistivity of 3.5 mΩcm at a dopant concentration of 2.5 × 10<sup>19</sup> boron atoms/cm<sup>3</sup>. P<sup>+</sup>/n diodes were fabricated by selectively growing p<sup>+</sup>- Si<sub>0.73</sub>Ge<sub>0.27</sub> on n-doped bulk Ge and n-doped Si wafers, respectively. The geometrical leakage current contribution shifts from the perimeter to the bulk as the diode sizes increase. Extracted near midgap activation energies are similar to p<sup>+</sup>/n Ge junctions formed by ion implantation. This indicates that the reverse leakage current in p<sup>+</sup>/n Ge diodes fabricated with various doping methods, could originate from the same trap-assisted mechanism. Working p<sup>+</sup>/n diodes on Ge bulk substrates displayed a reverse current density as low as 2.2·10<sup>−2</sup> A/cm<sup>2</sup> which was found to be comparable to other literature data. The layers developed in this work can be used as an alternative method to form p<sup>+</sup>/n junctions on Ge substrates, showing comparable junction leakage results to ion implantation approaches.https://www.mdpi.com/2079-9292/9/4/578germaniumSiGejunctiondiodeselectiveepitaxy |
| spellingShingle | Konstantinos Garidis Ahmad Abedin Ali Asadollahi Per-Erik Hellström Mikael Östling Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p<sup>+</sup>/n Junction Formation Electronics germanium SiGe junction diode selective epitaxy |
| title | Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p<sup>+</sup>/n Junction Formation |
| title_full | Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p<sup>+</sup>/n Junction Formation |
| title_fullStr | Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p<sup>+</sup>/n Junction Formation |
| title_full_unstemmed | Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p<sup>+</sup>/n Junction Formation |
| title_short | Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p<sup>+</sup>/n Junction Formation |
| title_sort | selective epitaxial growth of in situ doped sige on bulk ge for p sup sup n junction formation |
| topic | germanium SiGe junction diode selective epitaxy |
| url | https://www.mdpi.com/2079-9292/9/4/578 |
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