Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET
Abstract Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications. In this work, a junctionless surrounded gate-graded channel MOSFET (JLSGGC MOSFET) is investigated thoroughly to analyze its li...
| Autors principals: | , , , |
|---|---|
| Format: | Article |
| Idioma: | English |
| Publicat: |
Springer
2023-12-01
|
| Col·lecció: | SN Applied Sciences |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1007/s42452-023-05473-x |