Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET
Abstract Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications. In this work, a junctionless surrounded gate-graded channel MOSFET (JLSGGC MOSFET) is investigated thoroughly to analyze its li...
| Những tác giả chính: | , , , |
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| Định dạng: | Bài viết |
| Ngôn ngữ: | English |
| Được phát hành: |
Springer
2023-12-01
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| Loạt: | SN Applied Sciences |
| Những chủ đề: | |
| Truy cập trực tuyến: | https://doi.org/10.1007/s42452-023-05473-x |