Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET
Abstract Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications. In this work, a junctionless surrounded gate-graded channel MOSFET (JLSGGC MOSFET) is investigated thoroughly to analyze its li...
Príomhchruthaitheoirí: | Sarita Misra, Sudhansu Mohan Biswal, Biswajit Baral, Sudhansu Kumar Pati |
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Formáid: | Alt |
Teanga: | English |
Foilsithe / Cruthaithe: |
Springer
2023-12-01
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Sraith: | SN Applied Sciences |
Ábhair: | |
Rochtain ar líne: | https://doi.org/10.1007/s42452-023-05473-x |
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