Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET

Abstract Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications. In this work, a junctionless surrounded gate-graded channel MOSFET (JLSGGC MOSFET) is investigated thoroughly to analyze its li...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид: Sarita Misra, Sudhansu Mohan Biswal, Biswajit Baral, Sudhansu Kumar Pati
Формат: Өгүүллэг
Хэл сонгох:English
Хэвлэсэн: Springer 2023-12-01
Цуврал:SN Applied Sciences
Нөхцлүүд:
Онлайн хандалт:https://doi.org/10.1007/s42452-023-05473-x

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