Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET

Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET

Abstract Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications. In this work, a junctionless surrounded gate-graded channel MOSFET (JLSGGC MOSFET) is investigated thoroughly to analyze its li...

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Bibliografiska uppgifter
Huvudupphovsmän: Sarita Misra, Sudhansu Mohan Biswal, Biswajit Baral, Sudhansu Kumar Pati
Materialtyp: Artikel
Språk:English
Publicerad: Springer 2023-12-01
Serie:SN Applied Sciences
Ämnen:
Higher order transconductance ( Gm1,Gm2)
VIP2,VIP3
IIP3
IMD3,P1dB,intrinsic gain,fT
fmax
Länkar:https://doi.org/10.1007/s42452-023-05473-x

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