Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET

Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET

Abstract Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications. In this work, a junctionless surrounded gate-graded channel MOSFET (JLSGGC MOSFET) is investigated thoroughly to analyze its li...

Volledige beschrijving

Bibliografische gegevens
Hoofdauteurs: Sarita Misra, Sudhansu Mohan Biswal, Biswajit Baral, Sudhansu Kumar Pati
Formaat: Artikel
Taal:English
Gepubliceerd in: Springer 2023-12-01
Reeks:SN Applied Sciences
Onderwerpen:
Higher order transconductance ( Gm1,Gm2)
VIP2,VIP3
IIP3
IMD3,P1dB,intrinsic gain,fT
fmax
Online toegang:https://doi.org/10.1007/s42452-023-05473-x

Internet

https://doi.org/10.1007/s42452-023-05473-x

Gelijkaardige items