Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET
Abstract Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications. In this work, a junctionless surrounded gate-graded channel MOSFET (JLSGGC MOSFET) is investigated thoroughly to analyze its li...
| Główni autorzy: | , , , |
|---|---|
| Format: | Artykuł |
| Język: | English |
| Wydane: |
Springer
2023-12-01
|
| Seria: | SN Applied Sciences |
| Hasła przedmiotowe: | |
| Dostęp online: | https://doi.org/10.1007/s42452-023-05473-x |