Optically Reconfigurable Complementary Logic Gates Enabled by Bipolar Photoresponse in Gallium Selenide Memtransistor

Optically Reconfigurable Complementary Logic Gates Enabled by Bipolar Photoresponse in Gallium Selenide Memtransistor

Abstract To avoid the complexity of the circuit for in‐memory computing, simultaneous execution of multiple logic gates (OR, AND, NOR, and NAND) and memory behavior are demonstrated in a single device of oxygen plasma‐treated gallium selenide (GaSe) memtransistor. Resistive switching behavior with R...

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Bibliographic Details
Main Authors: Shania Rehman, Muhammad Asghar Khan, Honggyun Kim, Harshada Patil, Jamal Aziz, Kalyani D. Kadam, Malik Abdul Rehman, Muhammad Rabeel, Aize Hao, Karim Khan, Sungho Kim, Jonghwa Eom, Deok‐kee Kim, Muhammad Farooq Khan
Format: Article
Language:English
Published: Wiley 2023-06-01
Series:Advanced Science
Subjects:
charge trapping
gallium selenide
logic gates
memtransistors
resistive switching
Online Access:https://doi.org/10.1002/advs.202205383

Internet

https://doi.org/10.1002/advs.202205383

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