Optically Reconfigurable Complementary Logic Gates Enabled by Bipolar Photoresponse in Gallium Selenide Memtransistor

Optically Reconfigurable Complementary Logic Gates Enabled by Bipolar Photoresponse in Gallium Selenide Memtransistor

Abstract To avoid the complexity of the circuit for in‐memory computing, simultaneous execution of multiple logic gates (OR, AND, NOR, and NAND) and memory behavior are demonstrated in a single device of oxygen plasma‐treated gallium selenide (GaSe) memtransistor. Resistive switching behavior with R...

Полное описание

Библиографические подробности
Главные авторы:	Shania Rehman, Muhammad Asghar Khan, Honggyun Kim, Harshada Patil, Jamal Aziz, Kalyani D. Kadam, Malik Abdul Rehman, Muhammad Rabeel, Aize Hao, Karim Khan, Sungho Kim, Jonghwa Eom, Deok‐kee Kim, Muhammad Farooq Khan
Формат:	Статья
Язык:	English
Опубликовано:	Wiley 2023-06-01
Серии:	Advanced Science
Предметы:	charge trapping gallium selenide logic gates memtransistors resistive switching
Online-ссылка:	https://doi.org/10.1002/advs.202205383

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