Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface

Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface

<p>Abstract</p> <p>The ordered growth of self-assembled SiGe islands by surface thermal diffusion in ultra high vacuum from a lithographically etched Ge stripe on pit-patterned Si(100) surface has been experimentally investigated. The total surface coverage of Ge strongly depends o...

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Bibliographic Details
Main Authors: Bollani Monica, Colombo Davide, Isella Giovanni, Osmond Johann, Sordan Roman, Vanacore GiovanniMaria, Zani Maurizio, Tagliaferri Alberto
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
SiGe islands
Ordering
Pit-patterned Si surface
Nucleation
Diffusion
Growth dynamics
Online Access:http://dx.doi.org/10.1007/s11671-010-9781-0

Internet

http://dx.doi.org/10.1007/s11671-010-9781-0

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