Theoretical Maximum Thermoelectric Performance of p‐Type Hf‐ and Zr‐Doped NbFeSb Half‐Heusler Compounds
Abstract Half‐Heusler compounds are promising materials for thermoelectric applications due to their high zT at elevated temperatures. However, their intrinsic high thermal conductivity limits their efficiency. Doping with Hf or Zr can improve the zT of these materials. Recently, a high zT of 1.5 at...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-07-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300857 |