Local V OC Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires
Abstract This work focuses on the extraction of the open circuit voltage (V OC) on photovoltaic nanowires by surface photovoltage (SPV) based on Kelvin probe force microscopy (KPFM) measurements. In a first approach, P-I-N radial junction (RJ) silicon nanowire (SiNW) devices were investigated under...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-12-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-019-3230-5 |
| _version_ | 1797722932873527296 |
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| author | Clément Marchat Letian Dai José Alvarez Sylvain Le Gall Jean-Paul Kleider Soumyadeep Misra Pere Roca i Cabarrocas |
| author_facet | Clément Marchat Letian Dai José Alvarez Sylvain Le Gall Jean-Paul Kleider Soumyadeep Misra Pere Roca i Cabarrocas |
| author_sort | Clément Marchat |
| collection | DOAJ |
| description | Abstract This work focuses on the extraction of the open circuit voltage (V OC) on photovoltaic nanowires by surface photovoltage (SPV) based on Kelvin probe force microscopy (KPFM) measurements. In a first approach, P-I-N radial junction (RJ) silicon nanowire (SiNW) devices were investigated under illumination by KPFM and current-voltage (I-V) analysis. Within 5%, the extracted SPV correlates well with the V OC. In a second approach, local SPV measurements were applied on single isolated radial junction SiNWs pointing out shadowing effects from the AFM tip that can strongly impact the SPV assessment. Several strategies in terms of AFM tip shape and illumination orientation have been put in place to minimize this effect. Local SPV measurements on isolated radial junction SiNWs increase logarithmically with the illumination power and demonstrate a linear behavior with the V OC. The results show notably that contactless measurements of the V OC become feasible at the scale of single photovoltaic SiNW devices. |
| first_indexed | 2024-03-12T09:55:49Z |
| format | Article |
| id | doaj.art-c9825f9bbdcb46a1baf8dc0a21f8c9ef |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T09:55:49Z |
| publishDate | 2019-12-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-c9825f9bbdcb46a1baf8dc0a21f8c9ef2023-09-02T12:15:09ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-12-011411810.1186/s11671-019-3230-5Local V OC Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si NanowiresClément Marchat0Letian Dai1José Alvarez2Sylvain Le Gall3Jean-Paul Kleider4Soumyadeep Misra5Pere Roca i Cabarrocas6Institut Photovoltaïque d’Ile-de-France (IPVF)Génie électrique et électronique de Paris (GeePs), UMR CNRS 8507, CentraleSupélec, Univ. Paris-Sud, Université Paris-Saclay, Sorbonne Universités, UPMC Univ Paris 06Institut Photovoltaïque d’Ile-de-France (IPVF)Génie électrique et électronique de Paris (GeePs), UMR CNRS 8507, CentraleSupélec, Univ. Paris-Sud, Université Paris-Saclay, Sorbonne Universités, UPMC Univ Paris 06Institut Photovoltaïque d’Ile-de-France (IPVF)Laboratoire de Physique et Interfaces et des Couches Minces (LPICM), UMR CNRS 7647, CNRS, Ecole Polytechnique, Université Paris-SaclayLaboratoire de Physique et Interfaces et des Couches Minces (LPICM), UMR CNRS 7647, CNRS, Ecole Polytechnique, Université Paris-SaclayAbstract This work focuses on the extraction of the open circuit voltage (V OC) on photovoltaic nanowires by surface photovoltage (SPV) based on Kelvin probe force microscopy (KPFM) measurements. In a first approach, P-I-N radial junction (RJ) silicon nanowire (SiNW) devices were investigated under illumination by KPFM and current-voltage (I-V) analysis. Within 5%, the extracted SPV correlates well with the V OC. In a second approach, local SPV measurements were applied on single isolated radial junction SiNWs pointing out shadowing effects from the AFM tip that can strongly impact the SPV assessment. Several strategies in terms of AFM tip shape and illumination orientation have been put in place to minimize this effect. Local SPV measurements on isolated radial junction SiNWs increase logarithmically with the illumination power and demonstrate a linear behavior with the V OC. The results show notably that contactless measurements of the V OC become feasible at the scale of single photovoltaic SiNW devices.https://doi.org/10.1186/s11671-019-3230-5Solar cellsKPNanoscaleCharacterizationSurface photovoltage spectroscopySPS |
| spellingShingle | Clément Marchat Letian Dai José Alvarez Sylvain Le Gall Jean-Paul Kleider Soumyadeep Misra Pere Roca i Cabarrocas Local V OC Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires Nanoscale Research Letters Solar cells KP Nanoscale Characterization Surface photovoltage spectroscopy SPS |
| title | Local V OC Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires |
| title_full | Local V OC Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires |
| title_fullStr | Local V OC Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires |
| title_full_unstemmed | Local V OC Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires |
| title_short | Local V OC Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires |
| title_sort | local v oc measurements by kelvin probe force microscopy applied on p i n radial junction si nanowires |
| topic | Solar cells KP Nanoscale Characterization Surface photovoltage spectroscopy SPS |
| url | https://doi.org/10.1186/s11671-019-3230-5 |
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