TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs
For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps. Under the positive transmission line pulse (TLP) simul...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-11-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/10/11/1059 |