CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

(111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated. For film thicknesses below 300 nm, the 3C-SiC material deposit...

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Bibliographic Details
Main Authors: Marc Portail, Eric Frayssinet, Adrien Michon, Stéphanie Rennesson, Fabrice Semond, Aimeric Courville, Marcin Zielinski, Remi Comyn, Luan Nguyen, Yvon Cordier, Philippe Vennéguès
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Crystals
Subjects:
silicon carbide
aluminum nitride
chemical vapor deposition
epitaxy
Online Access:https://www.mdpi.com/2073-4352/12/11/1605

Internet

https://www.mdpi.com/2073-4352/12/11/1605

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