CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth
(111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated. For film thicknesses below 300 nm, the 3C-SiC material deposit...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-11-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/11/1605 |
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| author | Marc Portail Eric Frayssinet Adrien Michon Stéphanie Rennesson Fabrice Semond Aimeric Courville Marcin Zielinski Remi Comyn Luan Nguyen Yvon Cordier Philippe Vennéguès |
| author_facet | Marc Portail Eric Frayssinet Adrien Michon Stéphanie Rennesson Fabrice Semond Aimeric Courville Marcin Zielinski Remi Comyn Luan Nguyen Yvon Cordier Philippe Vennéguès |
| author_sort | Marc Portail |
| collection | DOAJ |
| description | (111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated. For film thicknesses below 300 nm, the 3C-SiC material deposited on 2H-AlN/Si presented a better structural quality than the 3C-SiC films grown directly on Si(111) using the well-established two-step carbonization–epitaxy process. The good lattice match of 3C-SiC with AlN may open a reliable route towards high-quality thin heteroepitaxial 3C-SiC films on a silicon wafer. Nevertheless, the 3C-SiC was featured by the presence of twinned domains and small inclusions of 6H-SiC. The formation of a thin AlSiN film at the AlN/Si interface is also reported. This is the first time such AlSiN layers are described within an AlN/Si heterostructure. Furthermore, noticeable modifications were observed in the AlN film. First, the growth process of SiC on AlN induced a reduction of the dislocation density in the AlN, attesting to the structural healing of AlN with thermal treatment, as already observed for other AlN-based heterostructures with higher-temperature processes. The growth of SiC on AlN also induced a dramatic reduction in the insulating character of the AlN, which could be related to a noticeable cross-doping between the materials. |
| first_indexed | 2024-03-09T19:09:43Z |
| format | Article |
| id | doaj.art-c999694b54404f8186d73c2181eb01a0 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T19:09:43Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-c999694b54404f8186d73c2181eb01a02023-11-24T04:16:00ZengMDPI AGCrystals2073-43522022-11-011211160510.3390/cryst12111605CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during GrowthMarc Portail0Eric Frayssinet1Adrien Michon2Stéphanie Rennesson3Fabrice Semond4Aimeric Courville5Marcin Zielinski6Remi Comyn7Luan Nguyen8Yvon Cordier9Philippe Vennéguès10Université Côte d’Azur, CNRS, CRHEA, Rue Bernard Grégory, 06560 Valbonne, FranceUniversité Côte d’Azur, CNRS, CRHEA, Rue Bernard Grégory, 06560 Valbonne, FranceUniversité Côte d’Azur, CNRS, CRHEA, Rue Bernard Grégory, 06560 Valbonne, FranceEASYGaN, SAS, CRHEA/CNRS, Rue Bernard Grégory, 06560 Valbonne, FranceUniversité Côte d’Azur, CNRS, CRHEA, Rue Bernard Grégory, 06560 Valbonne, FranceUniversité Côte d’Azur, CNRS, CRHEA, Rue Bernard Grégory, 06560 Valbonne, FranceNOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac, FranceUniversité Côte d’Azur, CNRS, CRHEA, Rue Bernard Grégory, 06560 Valbonne, FranceUniversité Côte d’Azur, CNRS, CRHEA, Rue Bernard Grégory, 06560 Valbonne, FranceUniversité Côte d’Azur, CNRS, CRHEA, Rue Bernard Grégory, 06560 Valbonne, FranceUniversité Côte d’Azur, CNRS, CRHEA, Rue Bernard Grégory, 06560 Valbonne, France(111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated. For film thicknesses below 300 nm, the 3C-SiC material deposited on 2H-AlN/Si presented a better structural quality than the 3C-SiC films grown directly on Si(111) using the well-established two-step carbonization–epitaxy process. The good lattice match of 3C-SiC with AlN may open a reliable route towards high-quality thin heteroepitaxial 3C-SiC films on a silicon wafer. Nevertheless, the 3C-SiC was featured by the presence of twinned domains and small inclusions of 6H-SiC. The formation of a thin AlSiN film at the AlN/Si interface is also reported. This is the first time such AlSiN layers are described within an AlN/Si heterostructure. Furthermore, noticeable modifications were observed in the AlN film. First, the growth process of SiC on AlN induced a reduction of the dislocation density in the AlN, attesting to the structural healing of AlN with thermal treatment, as already observed for other AlN-based heterostructures with higher-temperature processes. The growth of SiC on AlN also induced a dramatic reduction in the insulating character of the AlN, which could be related to a noticeable cross-doping between the materials.https://www.mdpi.com/2073-4352/12/11/1605silicon carbidealuminum nitridechemical vapor depositionepitaxy |
| spellingShingle | Marc Portail Eric Frayssinet Adrien Michon Stéphanie Rennesson Fabrice Semond Aimeric Courville Marcin Zielinski Remi Comyn Luan Nguyen Yvon Cordier Philippe Vennéguès CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth Crystals silicon carbide aluminum nitride chemical vapor deposition epitaxy |
| title | CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth |
| title_full | CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth |
| title_fullStr | CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth |
| title_full_unstemmed | CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth |
| title_short | CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth |
| title_sort | cvd elaboration of 3c sic on aln si heterostructures structural trends and evolution during growth |
| topic | silicon carbide aluminum nitride chemical vapor deposition epitaxy |
| url | https://www.mdpi.com/2073-4352/12/11/1605 |
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