Novel Modeling Approach to Analyze Threshold Voltage Variability in Short Gate-Length (15–22 nm) Nanowire FETs with Various Channel Diameters

Novel Modeling Approach to Analyze Threshold Voltage Variability in Short Gate-Length (15–22 nm) Nanowire FETs with Various Channel Diameters

In this study, threshold voltage (<i>V</i><sub>th</sub>) variability was investigated in silicon nanowire field-effect transistors (SNWFETs) with short gate-lengths of 15–22 nm and various channel diameters (<i>D</i><sub>NW</sub>) of 7, 9, and 12 nm. L...

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Bibliographic Details
Main Authors: Seunghwan Lee, Jun-Sik Yoon, Junjong Lee, Jinsu Jeong, Hyeok Yun, Jaewan Lim, Sanguk Lee, Rock-Hyun Baek
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Nanomaterials
Subjects:
variability modeling
threshold voltage
SNWFET
ultrashort gate-length
Pelgrom’s law
nanowire diameter
Online Access:https://www.mdpi.com/2079-4991/12/10/1721

Internet

https://www.mdpi.com/2079-4991/12/10/1721

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