Excellent Bipolar Resistive Switching Characteristics of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Thin Films Prepared via Sol-Gel Process

Excellent Bipolar Resistive Switching Characteristics of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Thin Films Prepared via Sol-Gel Process

Herein, Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO<sub>3</sub>/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characterist...

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Bibliographic Details
Main Authors: He-Chun Zhou, Yan-Ping Jiang, Xin-Gui Tang, Qiu-Xiang Liu, Wen-Hua Li, Zhen-Hua Tang
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Nanomaterials
Subjects:
Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>
resistive switching
oxygen vacancies
conductive filaments
thin film
Online Access:https://www.mdpi.com/2079-4991/11/10/2705

Internet

https://www.mdpi.com/2079-4991/11/10/2705

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