A Comparative Study of Single-Event-Burnout for 4H-SiC UMOSFET

A Comparative Study of Single-Event-Burnout for 4H-SiC UMOSFET

SiC UMOSFET is a kind of significant power device in the supply of aerospace. But it is sensitive to space radiation. In this paper, the discrepancy of SEB behavior and research of 4H-SiC UMOSFET with the different values of particle linear energy transfer (LET) are proposed and investigated by the...

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Bibliographic Details
Main Authors: Ying Wang, Jian-cheng Zhou, Mao Lin, Xing-ji Li, Jian-Qun Yang, Fei Cao
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
2-D numerical simulation
SiC power MOSFET
single-event burnout (SEB)
linear energy transfer (LET)
buff
Online Access:https://ieeexplore.ieee.org/document/9763041/

Internet

https://ieeexplore.ieee.org/document/9763041/

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