Three-Dimensional TID Hardening Design for 14 nm Node SOI FinFETs
The fin field-effect transistor (FinFET) has been the mainstream technology on the VLSI platform since the 22 nm node. The silicon-on-insulator (SOI) FinFET, featuring low power consumption, superior computational power and high single-event effect (SEE) resistance, shows advantages in integrated ci...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-12-01
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| Series: | Eng |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2673-4117/2/4/39 |