Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy

Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy

InSb nanoflags are grown by chemical beam epitaxy in regular arrays on top of Au-catalyzed InP nanowires synthesized on patterned SiO<sub>2</sub>/InP(111)B substrates. Two-dimensional geometry of the nanoflags is achieved by stopping the substrate rotation in the step of the InSb growth....

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Bibliographic Details
Main Authors: Isha Verma, Valentina Zannier, Vladimir G. Dubrovskii, Fabio Beltram, Lucia Sorba
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Nanomaterials
Subjects:
InSb nanoflags
InP nanowires
chemical beam epitaxy
regular array
growth modeling
Online Access:https://www.mdpi.com/2079-4991/12/7/1090

Internet

https://www.mdpi.com/2079-4991/12/7/1090

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