High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors

High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors

We systematically studied the characteristics and influence of free layer thickness in magnetic tunnel junction (MTJ) with a perpendicular synthetic antiferromagnetic (p-SAF) reference layer on 8-inch wafer. The results show clearly that there is an optimal thickness of free layer to achieve the hig...

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Bibliographic Details
Main Authors: Zicong Lei, Shaohua Yan, Zhiqiang Cao, Zongxia Guo, Panshen Song, You Qiang, Jun Wang, Weisheng Zhao, Qunwen Leng
Format: Article
Language:English
Published: AIP Publishing LLC 2019-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5117320

Internet

http://dx.doi.org/10.1063/1.5117320

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