High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors
We systematically studied the characteristics and influence of free layer thickness in magnetic tunnel junction (MTJ) with a perpendicular synthetic antiferromagnetic (p-SAF) reference layer on 8-inch wafer. The results show clearly that there is an optimal thickness of free layer to achieve the hig...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-08-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5117320 |
| _version_ | 1818143476775124992 |
|---|---|
| author | Zicong Lei Shaohua Yan Zhiqiang Cao Zongxia Guo Panshen Song You Qiang Jun Wang Weisheng Zhao Qunwen Leng |
| author_facet | Zicong Lei Shaohua Yan Zhiqiang Cao Zongxia Guo Panshen Song You Qiang Jun Wang Weisheng Zhao Qunwen Leng |
| author_sort | Zicong Lei |
| collection | DOAJ |
| description | We systematically studied the characteristics and influence of free layer thickness in magnetic tunnel junction (MTJ) with a perpendicular synthetic antiferromagnetic (p-SAF) reference layer on 8-inch wafer. The results show clearly that there is an optimal thickness of free layer to achieve the highest tunneling magnetoresistance (TMR) ratio of as high as 80.5% and 53.7% with perpendicular and in-plane magnetic field, respectively, while the resistance-area product (RA) reaches also highest value of 21.1 Ω*μm2. The thickness range of CoFeB to obtain perpendicular magnetic anisotropy (PMA) is determined. The variation of the magnetic moment of free layer indicates that the three-dimensional (3D) sensors can be designed by varying the thickness of the free layer and be controlled by the perpendicular and in-plane components through annealing under the in-plane magnetic field. |
| first_indexed | 2024-12-11T11:32:17Z |
| format | Article |
| id | doaj.art-ca18acde25364a9c81c443716c84a17b |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-11T11:32:17Z |
| publishDate | 2019-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-ca18acde25364a9c81c443716c84a17b2022-12-22T01:08:50ZengAIP Publishing LLCAIP Advances2158-32262019-08-0198085127085127-610.1063/1.5117320110908ADVHigh TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensorsZicong Lei0Shaohua Yan1Zhiqiang Cao2Zongxia Guo3Panshen Song4You Qiang5Jun Wang6Weisheng Zhao7Qunwen Leng8Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, ChinaBeihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, ChinaBeihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, ChinaFert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing 100191, ChinaFert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing 100191, ChinaDepartment of Physics, University of Idaho, Moscow, Idaho 83844-0903, USASchool of Electronic and Information Engineering, Beihang University, Beijing 100191, ChinaBeihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, ChinaBeihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, ChinaWe systematically studied the characteristics and influence of free layer thickness in magnetic tunnel junction (MTJ) with a perpendicular synthetic antiferromagnetic (p-SAF) reference layer on 8-inch wafer. The results show clearly that there is an optimal thickness of free layer to achieve the highest tunneling magnetoresistance (TMR) ratio of as high as 80.5% and 53.7% with perpendicular and in-plane magnetic field, respectively, while the resistance-area product (RA) reaches also highest value of 21.1 Ω*μm2. The thickness range of CoFeB to obtain perpendicular magnetic anisotropy (PMA) is determined. The variation of the magnetic moment of free layer indicates that the three-dimensional (3D) sensors can be designed by varying the thickness of the free layer and be controlled by the perpendicular and in-plane components through annealing under the in-plane magnetic field.http://dx.doi.org/10.1063/1.5117320 |
| spellingShingle | Zicong Lei Shaohua Yan Zhiqiang Cao Zongxia Guo Panshen Song You Qiang Jun Wang Weisheng Zhao Qunwen Leng High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors AIP Advances |
| title | High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors |
| title_full | High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors |
| title_fullStr | High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors |
| title_full_unstemmed | High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors |
| title_short | High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors |
| title_sort | high tmr for both in plane and perpendicular magnetic field justified by cofeb free layer thickness for 3 d mtj sensors |
| url | http://dx.doi.org/10.1063/1.5117320 |
| work_keys_str_mv | AT ziconglei hightmrforbothinplaneandperpendicularmagneticfieldjustifiedbycofebfreelayerthicknessfor3dmtjsensors AT shaohuayan hightmrforbothinplaneandperpendicularmagneticfieldjustifiedbycofebfreelayerthicknessfor3dmtjsensors AT zhiqiangcao hightmrforbothinplaneandperpendicularmagneticfieldjustifiedbycofebfreelayerthicknessfor3dmtjsensors AT zongxiaguo hightmrforbothinplaneandperpendicularmagneticfieldjustifiedbycofebfreelayerthicknessfor3dmtjsensors AT panshensong hightmrforbothinplaneandperpendicularmagneticfieldjustifiedbycofebfreelayerthicknessfor3dmtjsensors AT youqiang hightmrforbothinplaneandperpendicularmagneticfieldjustifiedbycofebfreelayerthicknessfor3dmtjsensors AT junwang hightmrforbothinplaneandperpendicularmagneticfieldjustifiedbycofebfreelayerthicknessfor3dmtjsensors AT weishengzhao hightmrforbothinplaneandperpendicularmagneticfieldjustifiedbycofebfreelayerthicknessfor3dmtjsensors AT qunwenleng hightmrforbothinplaneandperpendicularmagneticfieldjustifiedbycofebfreelayerthicknessfor3dmtjsensors |